![lod-fdtd lod-fdtd](https://www.researchgate.net/profile/Keyhan-Hosseini/publication/313954279/figure/fig4/AS:465385007915011@1487967840254/Layout-of-the-meander-slot-and-the-SIW-unit-cell-setup-10_Q320.jpg)
Gaussian impulse of maximum unit amplitude givenbytheEqn.(1)witht 0 83.33picosecandt 12. Like two-step LOD-FDTD method, three-step LOD-FDTD method also takes less computational time as compared with ADI-FDTD method and has nearly same accuracy. The FDTD model uses a uniform space lattice cubic Yee cells having x y z 0.25 cm and t 4.17 pico sec.
![lod-fdtd lod-fdtd](https://d3i71xaburhd42.cloudfront.net/e7ac63fdee55033d4e5214d3ce9084a3fb547a24/4-Figure1-1.png)
As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper. (5) is replaced by 26.42 load resis-tance. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. This approach leads to significant reduction of the semiconductor simulation time.
![lod-fdtd lod-fdtd](https://static-01.hindawi.com/articles/ijap/volume-2014/980967/figures/980967.fig.004.jpg)
Also, the comparison with the MC and the S-FDTD methods shows that reliable outcomes can be extracted even with larger time steps, thus making this technique more efficient than the other two aforementioned schemes. This paper describes a locally one-dimensional finite-difference time domain method for the two-dimensional time-dependent simulation of semiconductor devices. Findings This paper provides numerical results that prove the unconditional stability of the S-LOD-FDTD technique. Scientific Computing Scientific Computing - EM LOD-FDTD method for physical simulation of semiconductor devices An improved three-dimensional (3-D) locally one-dimensional finite-difference time-domain (LOD-FDTD) method is developed and applied to the wideband analysis of waveguide gratings.